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| RFP15N15 Data Sheet October 1998 File Number 1443.2 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09195. Features * 15A, 150V * rDS(ON) = 0.150 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information G PART NUMBER RFP15N15 PACKAGE TO-220AB BRAND RFP15N15 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB DRAIN (TAB) SOURCE DRAIN GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP15N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N15 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 150 150 15 40 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDD = 75V, ID 7.5A, RG = 50, VGS = 10V RL = 9.9, (Figures 10, 11, 12) 50 150 185 125 MIN 150 2 TYP MAX 4 1 25 100 0.150 2.25 1700 750 350 75 225 280 190 1.67 UNITS V V A A nA V pF pF pF ns ns ns ns oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case IGSS rDS(ON) VDS(ON) CISS COSS CRSS td(ON) tr td(OFF) tf VGS = 20V, VDS = 0V ID = 15A, VGS = 10V (Figures 6, 7) ID = 15A, VGS = 10V VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) Source to Drain Diode Specifications PARAMETERS Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 7.5A ISD = 4A, dISD/dt = 100A/s MIN TYP 200 MAX 1.4 UNITS V ns 2 RFP15N15 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 16 14 12 10 8 6 4 2 0 0 50 100 150 25 50 75 100 125 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) 150 0.8 0.6 0.4 0.2 0 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC CURVE MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE ID, DRAIN CURRENT (A) 30 PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC 10V 8V 7V ID, DRAIN CURRENT (A) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 20 VGS = 20V 6V 10 5V 3.6V 4V 0.1 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 7 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 40 30 TC = -40oC 25 20 15 10 5 0 0 1 TC = 125oC 2 3 4 TC = 125oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V 35 PULSE DURATION = 80s DUTY CYCLE 2% 0.30 TC = 25oC VGS = 10V PULSE DURATION = 80s 0.25 DUTY CYCLE 2% 0.20 0.15 TC = 125oC TC = 25oC RATURE CASE TEMPE TC = -40oC 0.10 0.05 0 0 TC = -40oC 5 6 7 8 9 10 5 10 VGS, GATE TO SOURCE VOLTAGE (V) 15 20 25 ID, DRAIN CURRENT (A) 30 35 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFP15N15 Typical Performance Curves Unless Otherwise Specified rDS(ON), NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 VGS = 10V ID = 15A PULSE DURATION = 80s NORMALIZED GATE THRESHOLD VOLTAGE (Continued) 1.4 VGS = VDS ID = 250A 1.5 1.2 1.0 1 0.5 0.8 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1600 VDS, DRAIN TO SOURCE VOLTAGE (V) 1400 CISS C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS 50 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 10 VGS, GATE TO SOURCE VOLTAGE (V) 112.5 VDD = BVDSS GATE SOURCE VOLTAGE RL = 10 IG(REF) = 1mA VGS = 10V 0.75BVDSS 0.50BVDSS 0.25BVDSS 8 VDD = BVDSS 6 75 4 37.5 2 DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer toIntersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFP15N15 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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